| 摘要 |
PURPOSE:To equalize an aluminum dry etching time for an aluminum electrode or the like by adding a substance absorbing chlorine radical to a pattern such as an aluminum electrode before forming the pattern by a dry etching process to remove an Al2O3 film therefrom. CONSTITUTION:An Si substrate on which an SiO2 film, a pure Al film and a resist film pattern are sequentially laminated on the surface is filled in a reaction chamber which is evacuated to a vacuum, and a mixture gas containing CCl4 of 0.2Torr, He of 0.17Torr and C2H4 of 0.1Torr or partial pressures is introduced into the reaction chamber. Then, a high frequency power suck as approx. 80W/ wafer is applied thereto for approx. 3min, and the same power is again applied thereto for approx. 8min while stopping inflowing of only the C2H4 to etch the Al film so as to form a desired Al electrode pattern. Since this method first absorbs a Cl radical in the forms of C2H3Cl, C2HCl3 and HCl and etches to remove only the Al2O3 and subsequently etches the Al, it can reduce the irregularity of processing time. |
