| 摘要 |
A radio frequency detector uses a Schottky barrier diode as the detection element. In order to protect this diode against damage caused by the application of excessive power, a NIP diode is connected in shunt with the Schottky barrier diode and is positioned very closely adjacent to it with the connecting leads being as short as possible. The NIP diode has a very low internal capacitance, which is compatible with the operation of the Schottky barrier diode as a radio frequency detector.
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