| 摘要 |
PURPOSE:To permit the deepest part of a crater of ion etching to easily agree with its analyzed point, by arranging a position accuracy for the virtual point of analysis, targeted from an ion gun, electron gun and analyzer, to be determined all by a mechanical accuracy. CONSTITUTION:A combined unit comprises an ion gun 1, for irradiating an ion to a sample 6 to made it processed etching, an electron gun 2, that irradiates an electron to the sample 6 and allows an auger electron to be emitted from the sample 6, and an energy analyzer 3 of cylindrical mirror type which performs a work of elementary analysis by detecting the anger electron emitted from the sample 6. A positioning work is previously performed for a virtual point of analysis, and the ion gun 1 and the electron gun 2 are fixed to the outer face of the analyzer 3. Then to an analyzer mounting plate 4, to which the analyzer 3 is mounted, having a vacuum flange 4a fitted to a flange 8a of a port 8 of a vacuum vessel 5, electrical connection wires 1a and 2a of the ion gun 1 and the electron gun 2 to the atmospheric side are equipped in such a manner that a vacuum sealing in the vacuum vessel 5 can be maintained. |
