| 摘要 |
PURPOSE:To raise dielectric strength by electrically connecting a base region with a source region of a double diffusing type insulating gate FET wherein the stabilization of drain current is contrived. CONSTITUTION:A base region 5 of double diffused structure is provided around a source region 4 wherein the base region is extended from a gate region 5a to a contat curface 5b with a source electrode 8. And the electrode 8 is connected with the source and base. The contact resistance with the source electrode is reduced by a high concentration layer 11. Furthermore, an increase in the amount of current is tried by widening the gate width. This structure permits the current to flow into the source region 4 through the base region 5 even if impact ionization occurs. But few current will flow into a low concentration and high resistance substrate 1. Therefore, a back gate voltage becomes small and the potential drops at the base and source regions are remarkably reduced. A forward voltage applied to a junction between the P-type base 5 and the N-type source 4 becomes small. A kink phenomenon occurring at low gate voltage will be eliminated and ON dielectric strength will be improved at high gate voltage. |
