| 摘要 |
PURPOSE:To reduce use of an organic solvent, and to enable to make a resist layer to be peeled off only by washing at manufacture of semiconductor device by a method wherein a water soluble polymer is made to be interposed between a layer to be etched and the resist layer. CONSTITUTION:A water soluble polymer of polyvinyl alcohol etc., is applied to form a resist stripping layer 2 on a semiconductor substrate 1' having a layer (SiO2 film, etc.) 1 to be etched, and then a photo resist layer 3 is applied thereon. After prebaking of the resist layer 3 is performed, exposure and development are performed. Then ashing is performed slightly in gas plasma containing oxygen, and the resist stripping layer 2 is removed from the part where the photo resist layer 3 is removed. Then the layer 1 to be etched is removed by dry etching (plasma etching), and patterning is performed. After then the substrate is dipped in a water bath to dissolute the resist stripping layer 2 of water soluble organic polymer, and the resist layer 3 is removed according to the lift off technique. |
