| 摘要 |
PURPOSE:To remarkably simply aligning process of a mask in a semiconductor device by forming an indication mark at the corresponding position of the exposed mask to a wafer. CONSTITUTION:Indication marks 19, 19' of the shape being different from first and second marks 17, 18 respectively are formed at the end of a mark installing area pattern 16 of the first exposure mask 14. On the other hand, indication marks 22, 22' are also formed at the end of a mark installing area 20 of a semiconductor wafer 11b, are then aligned initially with the respective indication marks, and are thereafter aligned with an inner profile formed by the second mark 21 and an outer profile formed by the mark 18. After they are photoetched, they are aligned with a wafer by using the second exposure mask, are photoetched, and processed several times repeatedly. New marks are sequentially formed in this case, but when the in dication mark is formed at the corresponding position of the exposure mask with the wafer, the masking work can be remarkably simply executed. |
