发明名称 |
SEMICONDUCTOR DEVICE WITH A LOW IMPEDANCE BASE CONTACT |
摘要 |
<p>A semiconductor device comprises a body of semiconductor material having a base-emitter structure on a first surface of the body. The base emitter structure includes a plurality of discrete emitter regions interdigitated with a base region having a base contact on the base region. A base contact ring is attached coaxially to the base contact. An improved base terminal structure comprises a conductive base feed-through ring having a base terminal integral with the feed-through ring. The base feed-through ring is spaced from and concentric with the base contact ring. The base terminal structure further includes a resilient contact ring attached to the base contact ring and the base feed-through ring to provide a low impedance interconnection between the base contact ring and the base feed-through ring.</p> |
申请公布号 |
GB2052854(A) |
申请公布日期 |
1981.01.28 |
申请号 |
GB19800005848 |
申请日期 |
1980.02.21 |
申请人 |
RCA CORP |
发明人 |
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分类号 |
H05K7/20;H01L23/14;H01L23/427;H01L23/48;H01L23/482;H01L23/64;H01L29/417;(IPC1-7):01L23/48 |
主分类号 |
H05K7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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