| 摘要 |
PURPOSE:To form a transistor having walled-emitter structure operating at high speed and fitted to the increase of the degree of integration by completing an isolation, forming laminated films having the layer structure of a silicon nitride- alpha polycrystalline silicon-a silicon nitride and utilizing the laminated films. CONSTITUTION:An isolation between elements is completed, and laminated films 6 having the layer structure of a silicon nitride 3-parial crystalline silicon 4-a silicon nitride 5 are formed to the surface. A partial film is left selectively to a section to which an emitter must be shaped, and an external base 13 in high concentration is formed. The polycrstalline silicon 4 is oxidized selectively. An opening 14 is formed to the section to which the emitter must be shaped. Impurities are introduced in succession through the opeing 14, and a P<-> type intrinsic base 130 and an N<+> type emitter 15 are formed. A passivation film 16 made of phosphorus silicate glass, etc. is formed, and a contact hole is bored and patterning through which an aluminum electrode 17, etc. are evaporated is executed, thus completing a device. |
