Electrically alterable nonvolatile memory

摘要

An electrically erasable nonvolatile memory system comprises nonvolatile memory cells each including one transistor. A plurality of row lines are connected commonly to the control gates of the memory cells arranged in a row direction, respectively. For applying a positive voltage to a selected row line upon data-write or data-read and a negative voltage to a selected row line upon data-erase, a plurality of control circuits are provided. Each control circuit is coupled with a corresponding one of the row lines, with one of outputs of a row decoder selecting a row line and with a control terminal which is commonly coupled to the control circuits. Each control circuit is so constructed as to supply to a corresponding row line with a voltage having a prescribed level corresponding to a voltage level applied to the control terminal.