Magnetic bubble domain chip with enhanced propagation margins

摘要

In magnetic bubble domain chips using layers of crystalline material having in-plane magnetization for propagation, hard bubble suppression, etc., asymmetric propagation often results due to crystalline anisotropies in the layer of in-plane magnetization. In these chips, different propagation margins result for propagation in different directions with respect to the crystalline axes of the in-plane layer. In the present magnetic chip, a plurality of shift registers is provided for movement of bubble domains in a plurality of directions, all of which provide good propagation margins. The registers are aligned in particular directions with respect to the directions of easy stripout of bubble domains in order to avoid the problem of asymmetric propagation. Examples are shown using ion implanted contiguous element propagation patterns organized in a major/minor loop type of storage organization.