| 摘要 |
PURPOSE:To obtain rectilinear inclined planes by a method wherein the areas of electrode layers are made smaller than the areas of semiconductor materials and the damaged layers of inclined planes by means of cutting working are removed by means of etching. CONSTITUTION:An electrode layer 16 of a semiconductor wafer 10 is stuck on a glass plate 19 as an example of supporting bodies, and metallic discs 21 as the one examples of etching-resisting layers are stuck on an ele electrode layer 15 as another main surface. Abrasives are blown against the whole from the upper portions of the discs 21, and semiconductor elements 1a, whose circumferential surfaces have inclined planes 17a, are formed. The circumferential surface portions of the electrode layers 15, 16 are etched, and semiconductor elements 1d are formed which the areas of the electrode layers 15, 16 are made smaller than the areas of semiconductor materials 11-13. The damaged layers 23 of the inclined palnes 17a due to the spraying of the abrasives are removed by means of etching treatment, and semiconductor elements 1e with rectilinear inclined planes 17c are made up. Thus, since the electrode layers 15, 16 retreat from the semiconductor materials, the inclined planes 17c are uniformly removed by means of etching over the whole circumferential surface, and consequently the inclined planes 17c are formed in rectilinear shapes. |
