| 摘要 |
PURPOSE:To limit a scanning range of laser rays within the surface of a semiconductor wafer and anneal the wafer uniformly by a method wherein a mirror is turned interlocking with the movement of a sample base. CONSTITUTION:A light course of a He-Ne laser 18 is bent by means of a vibrating mirror 19, and a sample base 16 is vertically irradiated together with a high output laser 11. Laser rays reciprocate in the X direction by the minute motion of a mirror 15, and scans on the whole surface of a wafer 17 because the base 16 moves in the Y direction. The output of the laser 11 is controlled or shielded 21 during the time when a sensor 20 detects the laser 18, the output of the laser 11 is increased when detecting the base 16, and the laser rays are periodically deflected by means of the mirror 15 and irradiate the wafer. A vibrating range of the mirror 15 is changed in response to the moving speed of the base 16, and a scanning range of the laser rays is altered. Thus, the laser rays do not irradiate the wafer while crossing an outer edge of the wafer. The output of the laser 11 is lowered or shielded after a fixed time, and annealing is completed. According to this constitution, the degree of freedom of the quality of a material and the shape of the sample base expands, and a cheap device having high accuracy is obtained. |
