发明名称 Direct metallisation, esp. of microcircuits, by electroplating - with low current pre-metallising and high current metallising in single bath
摘要 <p>A conductive substrate is metallised by carrying out the following steps using the same electroplating bath: (a) depositing, slowly and at low current, a thin pre-metallisation layer having a fine crystalline structure, and (b) depositing, rapidly and at high current, a metallisation layer having the same structure. The method is useful in silver, gold and nickel plating, esp. in the prodn. of electronic microcircuits to connect conductors and semiconductors and metallise support grids. The metallisation layer can be deposited rapidly and, since it has the same fine structure as the pre-metallisation layer, is adherent and resistant to aging.</p>
申请公布号 FR2460347(A1) 申请公布日期 1981.01.23
申请号 FR19790016900 申请日期 1979.06.29
申请人 THOMSON CSF 发明人 ANDRE MORTEYROL ET JEAN-PIERRE MARTIN;MARTIN JEAN-PIERRE
分类号 C25D3/46;C25D5/00;C25D5/10;H05K3/24;(IPC1-7):25D5/10;01L23/50;25D3/48;25D3/46 主分类号 C25D3/46
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