| 摘要 |
PURPOSE:To simplify the construction of an electrode lead-out portion of a comb- shaped full gate electrodes and full drain electrodes of an ultrahigh frequency field effect transistor and eliminate the bonding between an independent source and electrodes by leading out the comb-shaped electrodes and the drain electrode through equal length connecting portions in bundle each. CONSTITUTION:A gate electrode 21, a drain electrode 22 and a source electrode 23 are formed in comb shape on an N-type semiconductor gallium arsenide active layer on a semi-insulating gallium arsenide substrate, the comb-shaped gate electrode 21 is led out through equal length connecting portion 26 to a bonding pad 24, the comb-shaped drain electrode is led out through a connecting portion 28 to a bonding pad 25, and the source electrode is led out through the connecting portion 26 of the gate electrode and a silicon oxide film intersected at both side patterned lead wires to a grounding electrode pattern 27. |
