| 摘要 |
PURPOSE:To increase the mutual conductance and saturated current of a semiconductor device and reduce the capacity between the gate and the drain thereof by forming a silicon monocrystalline layer between the gate region and the drain substrate and forming a silicon monocrystalline layer between the source contact region and the drain substrate thereof. CONSTITUTION:A silicon monocrystalline layer 12 as a lower impurity density than the drain substrate 1 and reverse conducting type to the gate region 3 is formed between the gate region 3 and the drain substrate 1, and a silicon monocrystalline layer 11 having the same conducting type as the drain substrate 1 and higher impurity density than the layer 12 is formed at least partly between the source contact region 4 and the drain substrate 1. |
