| 摘要 |
PURPOSE:To cancel the affect of the bonding capacity between a semiconductor substrate and a diffused resistance layer and improve the high frequency characteristics of an integrated resistor by forming the bonding capacity in parallel with the resistor. CONSTITUTION:An N-type layer 6 surrounded by an isolation layer 7 is formed on a P-type substrate 9, a P-type diffused resistance layer 1 is formed therein, and N- type layer regions 10, 11 are formed in the vicinity of the electrodes 2, 3 respectively of the diffused resistance layer. A protective layer 8 is formed on the surfaces of N- type layers 6, 10, 11 and P-type layer 1 excluding the portions of the electrodes 2, 3, 12, 13, electrode conductor 4, 5 are connected to the electrodes 2, 3 respectively, and the electrodes 12, 13 are connected with a conductor 15. |
