| 摘要 |
PURPOSE:To make it possible to feed large current without enlarging a resistor element by a method wherein a hole opening section in the direction of the current flowing out is formed larger than that in the direction of the current flowing at the hole opening section for connection that is formed on both sides of a resistor element. CONSTITUTION:A resistor element 1-1 is formed on a semiconductor substrate 1-7, and then, a hole opening section is formed on an insulation film 1-2 to connect the resistor element and a wiring section. At that time, the shape of a hole opening section 1-4 in the direction of the current flowing out is formed larger than that of a hole opening section 1-3 in the direction of the current flowing in. After that, a wiring layer 1-5 on the side of lower potential and a wiring layer 1-6 on the side of higher potential are formed. With such construction, it is made possible to relieve the concentration of current at the hole opening section 1-4 of the direction of the current flowing out, thereby preventing the breakdown of the junction layer in the resistor element and reducing the size of the resistor element. |
