发明名称 |
MEMORY TYPE INSULATING GATE FIELD EFFECT SEMICONDUCTOR DEVICE |
摘要 |
<p>In a memory type insulated gate field effect semiconductor device including a semiconductor layer of one conductivity type, a source region of the opposite conductivity type formed in the surface of the semiconductor layer, a drain region of the opposite conductivity type formed in the surface of the semiconductor layer, a gate insulating layer affixed to the surface of the semiconductor layer, and a gate electrode deposited on the surface of the gate insulating layer, the gate insulating layer has a pair of thick gate guarding portions which exit on side of the source and drain regions, and a thin memory portion intermediate between the thick gate guarding portions, and a surface impurity concentration per square centimeter of the semiconductor layer under the thick gate guarding portions is different from a surface impurity concentration per square centimeter of the semiconductor layer under the tin memory portion. The voltage difference between the threshold voltages of the semiconductor device at the memorized state and at the non-memorized state can be increased, and the readout voltage of the semiconductor device can be reduced. The circuit design is simplified.</p> |
申请公布号 |
CA1094221(A) |
申请公布日期 |
1981.01.20 |
申请号 |
CA19770272825 |
申请日期 |
1977.02.28 |
申请人 |
SONY CORPORATION |
发明人 |
SHIMADA, TAKASHI;INOUE, KENICHI;OHTSU, TAKAJI;MOCHIZUKI, HIDENOBU;YAMAGUCHI, JIRO |
分类号 |
H01L21/8247;H01L21/265;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):11C11/40;01L29/76 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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