| 摘要 |
PURPOSE:To prevent deterioration due to heat treatment at a high temperature higher than 700 deg.C even when using a simple substance metal having low resistance by employing the mixed gas of hydrogen gas and nitrogen gas as an atmospheric gas in a high-temperature heat treatment process. CONSTITUTION:A high-temperature heat treatment process higher than 700 deg.C is executed in the mixed-gas atmosphere of hydrogen gas and nitrogen gas. On a Schottky diode, a W film in 0.2mum thickness is deposited on the surface of a GaAs substrate through sputtering, and worked to a circular electrode having a diameter of 100mum through a photolithographic technique, and an ohmic electrode is formed on the back of the GaAs substrate by an Au-Ge alloy film through lamp heat treatment for 10sec at 800 deg.C in the mixed gas of hydrogen gas and nitrogen gas at the ratio of 1:9. Accordingly, the height of a Schottky barrier can be held in the same manner as heat treatment at a comparatively low temperature is applied even after heat treatment at a high temperature, and the dispersion of element characteristics is not increased, thus shaping a Schottky barrier electrode having uniform characteristics.
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