| 摘要 |
PURPOSE:To improve crystallizability, reduce thermal resistance and electrical resistance, all for a lowered oscillation threshold current, by a method wherein a four-dimensional mixed crystal Al0.20Ga0.30In0.50P is replaced with a super- lattice structure of Al0.50In0.50P and Ga0.50In0.50P in the construction of an optical guide layer. CONSTITUTION:A GaInP/AlInP super-lattice layer 16 is formed to serve as an optical guide layer on an N-type GaAs substrate crystal 17. Next, a non- doped Ga0.50In0.50P layer 15 is formed. As a second optical guide layer, a P-type super-lattice layer 14 is formed of Ga0.50In0.50P/Al0.50In0.50P, whereon a P-type GaAs layer 13 and N-type layer 12 are epitaxially grown. A wafer is taken out of a reaction oven and stripe-geometry grooves are provided in the N-type GaAs layer 12. Further, on the N-type GaAs layer 12, an AuZn electrode 11 and, on the opposite side, an AuGeNi electrode 18 are formed by evaporation. A laser element of this design is completed when a Fabry-Perot reflecting surface is shaped following the cleaving of the wafer.
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