发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To avoid abnormal deposition of a film deposited on a lower metal layer by a method wherein an overhanging part of an upper metal layer which is projected out of the lower metal layer is formed by etching and the overhanging part is made to hand down to cover the side surfaces of the lower metal layer. CONSTITUTION:A lower metal layer 3 is etched. At that time, a sufficiently overhanging part of an upper metal layer 2 which is projected out of the lower metal layer 3 is formed by taking the etching period 3-5 times of the ordinary one. For instance, if the thickness of the lower Al layer is 3,000Angstrom , conventional etching period is 30sec at the temperature 40 deg.C but, to the contrary, the etching is carried out for 1min 30sec - 3min under the same conditions and then photoresist 1 is removed. By forming the overhanging part of the upper metal layer 2 sufficiently, the overhanging part hangs down after the photoresist 1 is removed and forms tapered parts so as to cover the side surfaces of the lower metal layer 3.
申请公布号 JPS62183539(A) 申请公布日期 1987.08.11
申请号 JP19860026122 申请日期 1986.02.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 MAEJIMA TARO
分类号 H01L21/3213 主分类号 H01L21/3213
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