| 摘要 |
PURPOSE:To enable a steep distribution of impurity concentration to be formed inside a surface of a compound semiconductor thin film, by interrupting epitaxial growth of the compound semiconductor thin film and radiating ultraviolet light having sufficient photon energy on a part of a surface of the thin film, so that atomic bonds in the thin film are dissociated and photo decomposition of the impurity raw materials is performed near the surface, and replacing the produced impurity cores between the dissociated atoms to introduce the impurities. CONSTITUTION:Epitaxial growth of GaAs is interrupted to radiate Excimer laser 106 at right angles of the surface of the epitaxial layer through a shading mask 105. Then, some Ga-As bonds of GaAs single crystal near the surface of the epitaxial layer are dissociated by photo energy. Because As vapor pressure is very high near the growth temperature, As whose bonds are dissociated vaporize to be scattered. H2Se 107 as impurity raw material is introduced during radiation of Excimer laser. The H2Se absorbs Excimer laser to be photo- decomposed into Se simple substance. Se impurity cores produced are bonded with As holes existing on the surface of the epitaxial layer. As a result, introduction or impurities in which Se is replaced by As can be completed.
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