发明名称 DIFFRACTED X-RAY DETECTING ELEMENT ON SEMICONDUCTOR
摘要 PURPOSE:To improve the sensitivity and the distance resolution by forming a prescribed number of quadrilateral unit elements in which length of opposed sides is equal, in plural lines and (n+1) rows so as to be adjacent, respectively in a semiconductor substrate and forming them by shifting the center point of the unit element of a second row and thereafter in the row direction by 1/n each against the center point of the unit element of the previous row. CONSTITUTION:Unit elements of a regular square for constituting a unit element aggregate are arranged in plural lines and (n+1) rows, and the elements of the second row and thereafter are formed by shifting them by 1/n each against the adjacent element, respectively. Subsequently, in a cylindrical area A of diffracted X rays 5 which are reflected from a sample 4 and have a radius being equal to width D, said detecting element is opposed to the sample 4 and provided by allowing the vertical direction of each row of the elements and the width direction of the X rays 5 to coincide with each other. Accordingly, the X rays 5 are received by a strip element train of 0.2mm width, and the sensitivity and the distance resolution can be raised without rotating the whole detecting element on the area A.
申请公布号 JPH01114741(A) 申请公布日期 1989.05.08
申请号 JP19870272553 申请日期 1987.10.28
申请人 FUJI ELECTRIC CO LTD 发明人 SATO NORITADA;MATSUMURA KEIICHI
分类号 H01L31/09;G01N23/207;G01T1/24;G01T1/29;H01L31/00;H01L31/10 主分类号 H01L31/09
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