| 摘要 |
PURPOSE:To realize a device wherein recombination-caused currents are reduced along a junction interface by a method wherein an ohmic electrode is built for a CdTe film side using a carbon film containing acceptor impurity formed on a Cd(Zn)S sintered film and another ohmic electrode is built on said Cd(Zn)S sintered film. CONSTITUTION:Screen printing is accomplished on a glass substrate 1, and baking is performed in an N2 atmosphere for the formation of a Cd(Zn)S sintered film 2 that is a solid solution of CdS and ZnS. To the Cd(Zn)S sintered film 2, a paste of Cd, Te, and CdTe powders is applied by means of screen printing, and belt-baking is accomplished at a prescribed temperature in an N2 atmosphere. As the result, a thin ZnTe-CdTe solid solution layer 3 and mosaic CdTe sintered film 4 are formed on the Cd(Zn)S sintered film 2. An ohmic electrode using a carbon film 5 containing an appropriate quantity of acceptor impurity is built on the mosaic CdTe sintered film 4, and then another ohmic electrode 6 is built on the surface of the Cd(Zn)S sintered film 2 for the completion of a device of this design. |
