| 摘要 |
PURPOSE:To prevent Al from diffusing in a semiconductor and to reduce the lowering of the characteristics as well as to contrive the prolongation of the lifetime by a method wherein a specific element is added as another component of a metal electrode, whose first component consists of the Al. CONSTITUTION:One kind of an element chosen from among a group consisting of iAg, iiAu, iiiCa, Mg, Mn, W and Cr, a group consisting of Cu, iv and Zn, a group consisting of Ge, vFe, Mo, Ni, Pd, Pt, Ti and V or a group consisting of Zr and viSi is added as another component of a metal electrode, whose first component consists of Al. Thereby, even through a semiconductor element is exposed to a high temperature after the metal electrode is formed, the metal constituting the metal electrode is prevented from diffusing in the semiconductor, the lowering of the characteristics is lessened and moreover, the retention is improved, at the same time, the lifetime can be prolonged. |
