| 摘要 |
PURPOSE:To obtain a uniform epitaxial layer by making the tamperature of melted liquid at a specified value with substrates being separated, making the inside of a furnace a vacuum state, thereafter adding the effective impurities, which are put in an open tube beforehand, into the melted liquid by carrier gas. CONSTITUTION:GaP substrates 13 are placed in a recess 12 of a boat 10, and melted Ga liquid 14 which is obtained by melting GaP is filled in a melted liquid container 11. Te particles are sealed in a tube 7 from a window 9. Ar gas is introduced into a reacting furnace 1, and the melted liquid 14 is heated 2 to about 800 deg.C. The introduction of the Ar gas is temporary stopped by a valve 5, and the inside of the furnace is made to become a vacuum of about 10 Torr. Carrier gas is sent into the tube 7, and Te is dropped into the solution 14. The temperature is further increased to about 900 deg.C, the melted liquid container 11 is slid, and the melted liquid 14 is flowed down to the recess and contacted with the substrates 13. Cooling is made at about 3 deg.C/min, and an N epitaxial layer is grown. In this method, the surfaces of the substrates 13 are not roughened, impurities are vaporized from the melted liquid 14, the concentration of the impurities is not reduced, and the melted liquid moves when it contacts with the substrates 13. Therefore, the impurities are sufficiently diffused, and the uniform epitaxial layer can be obtained. |
