| 摘要 |
PURPOSE:To make a proper pattern of a negative resist on a substrate or on a coating of a substrate having a remarkable stationary wave phenomenon, by providing a thick film on a thin film of a negative resist resist, making a mask of the thick film and applying plasma to change each exposed part of the thin film into ash. CONSTITUTION:A negative photoresist 9 is provided at a very small thickness on a coated film 2 on a semiconductor substrate 1 and baked. The entire surface of the baked photoresist is exposed to light 5. Another photoresist 10 is provided at a large thickness on the former photoresist and baked. A mask 4 is fitted. The photoresist 10 is exposed to light 5 and developed to make a proper pattern 11-13 with no wrinkles and exfoliations. After that, baking is effected. Gas plasma is applied to the thin resist film 9 through the mask 11-13 to change the film into ash to make another proper pattern 14-16 of the resist films 10, 9. The resulting mask 14-16 is used to selectively etch the film 2 and then removed. As a result, a desired pattern 17-19 is produced. The resist pattern of proper shape can thus be made by using the negative photoresists twice, without suffering from the influence of stationary waves or the like. |
