Integrated injection logic circuit with reduced injection current - achieved by locally modifying near surface doping of lateral transistor base

摘要

In the case of an PNP type lateral transistor the near surface region (6) of the base is of type N plus and is formed at the same stage as the collectors (5) of the vertical NPN transistor. This modified region neither touches nor intersects the emitter or collect regions. This technique permits structures to be used which would not formerly work because of excessive injection current and linear components to be integrated on the same dice without degrading switching speed and chip density of significantly increasing cost.