发明名称 |
OBERFLAECHENWELLENBAUELEMENT |
摘要 |
A surface acoustic wave device is disclosed, whose temperature characteristics are improved by introducing dopants in the semiconductor substrate 1 at a high density. The substrate may comprise a monocrystal silicon substrate with a low resistivity silicon layer 2 thereon forming the high density dopant layer. The dopants may comprise phosphor, arsenic, antimony or boron. <IMAGE>
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申请公布号 |
DE3817728(A1) |
申请公布日期 |
1988.12.08 |
申请号 |
DE19883817728 |
申请日期 |
1988.05.25 |
申请人 |
CLARION CO., LTD., TOKIO/TOKYO, JP |
发明人 |
SUGAI, KAZUYOSHI, TOKIO/TOKYO, JP |
分类号 |
H03H9/145;H03H3/08;H03H9/02;H03H9/25;(IPC1-7):H03H9/145 |
主分类号 |
H03H9/145 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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