发明名称 |
SI3N4 FORMED BY NITRIDATION OF SINTERED SILICON COMPACT |
摘要 |
<p>A polycrystalline silicon nitride body is produced by shaping silicon powder into a green body, sintering the body to produce a sintered body with a density ranging from 60% to 75% of the theoretical density of silicon, said sintered body having a microstructure with an average grain size as well as an average poresize ranging from about 0.1 micron to 6 microns and wherein the pores are interconnecting and open to the surface of the body, and reacting said sintered body with gaseous nitrogen to convert it to silicon nitride.</p> |
申请公布号 |
CA1093589(A) |
申请公布日期 |
1981.01.13 |
申请号 |
CA19770269251 |
申请日期 |
1977.01.06 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
GRESKOVICH, CHARLES D.;PROCHAZKA, SVANTE |
分类号 |
C04B35/591;(IPC1-7):04B35/52;04B35/14 |
主分类号 |
C04B35/591 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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