发明名称 SI3N4 FORMED BY NITRIDATION OF SINTERED SILICON COMPACT
摘要 <p>A polycrystalline silicon nitride body is produced by shaping silicon powder into a green body, sintering the body to produce a sintered body with a density ranging from 60% to 75% of the theoretical density of silicon, said sintered body having a microstructure with an average grain size as well as an average poresize ranging from about 0.1 micron to 6 microns and wherein the pores are interconnecting and open to the surface of the body, and reacting said sintered body with gaseous nitrogen to convert it to silicon nitride.</p>
申请公布号 CA1093589(A) 申请公布日期 1981.01.13
申请号 CA19770269251 申请日期 1977.01.06
申请人 GENERAL ELECTRIC COMPANY 发明人 GRESKOVICH, CHARLES D.;PROCHAZKA, SVANTE
分类号 C04B35/591;(IPC1-7):04B35/52;04B35/14 主分类号 C04B35/591
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