| 摘要 |
PURPOSE:To easily form an inductance at a semiconductor IC by conducting between wiring layers formed through an insulating film by utilizing a through hole perforated at the insulating film to form the inductance. CONSTITUTION:A through hole H is perforated at an insulating film I1 in a two- layer wiring structure, and when second metallic film F1 is formed, it is made contact with the first metallic film F2 formed on an insulating film I2 to conduct therebetween. In order to provide an inductance the films F2, F1 are etched to become linear pattern. Eventually, the insulating film I1 is interposed between the metallic films F2 and F1 to conduct through the hole H therebetween so as to form a coil structure. |
