| 摘要 |
PURPOSE:To make dispersion of triggering current of a gate small by a method wherein a region of one conducting mechanizm which shortcircuits an emitter region of one conducting mechanism and a region of a reverse conducting mechanism which compose a thyristor is formed within the region of the reverse conducting mechanism by ion implantation which has good controlability. CONSTITUTION:Each P-type layer 2 which is to be a gate region is formed by diffusion on both surfaces, that is front and back surface, of an N-type Si substrate 1, and they are covered with oxide films 3. Next the film 3 of the back surface is removed and the film 3 of the front surface is perforated to have an opening, and on an exposed surface of the layer 2 on the surface an N-type emitter area 4 is formed by diffusion. After this process on the film 3 which is extended outside the region 4 an opening which is disposed around the region 4 is perforated, and by utilizing ion implantation through it a gate emitter shortcircuiting resistor 7 which has low concentration and is shallow in depth is formed. Next a gate electrode 6 is built over the region including a part of it and a part of the layer 2, and a cathode electrode 5 is built on the region 4 respectively, and a thyristor which develops no misfiring despite of any small gate triggering current is obtained with good repeatability. |
