| 摘要 |
<p>PURPOSE:To easily execute the alignment of masks in the connecting holes of a semiconductor device even when providing a sufficiently thick protective film with shallow diffusion by selectively removing the surface of impurity diffused portion before or after diffusing the impurity. CONSTITUTION:When perforating an opening at an oxide film 3, etching the N-type epitaxial layer 1 through the opening to form an N<+>-type layer 2, a step 14 is formed on the oxide film 4. When coating it with protective films 5, 6, a step 15 is formed therebetween. According to this configuration, a shallow diffused layer 2 is formed via a thin oxide film 3, and even if thick protective films 5, 6 are laminated thereon, the step 13 on the surface of the layer 1 can be sufficiently observed. Accordingly, it can easily execute the alignment of masks in the connecting hole 7 thereat.</p> |
