| 摘要 |
PURPOSE:To enable ignorance of offsetting time or control thereof and uniformly form a miniature aluminum pattern with preferable reproducibility by superimposing a second layer capable of etching an aluminum layer subsequent to the formation of the aluminum layer in the same vacuum thereon, forming a mask thereon, and continuously dry etching it. CONSTITUTION:An aluminum layer 12 is vacuum evaporated on the SiO2 film 53 on an Si substrate 51, and polysilicon or amorphous silicon 53 is alminated continuously thereon in the same vacuum. No Al2O3 is formed on the surface of the layer 12 and no offsetting time is accordingly taken place. Then, a resist mask 13 is formed thereon to continuously plasma etch the polysilicon 53 and aluminum layer 12 with CCl4 gas. When the polysilicon 53 is etched, the layer 12 is immediately etched to produce no offsetting time therebetween to control the aluminum etching starting time due to the thickness of the polysilicon 53 formed on the aluminum. When the thickness of the layer 53 is set at several tens order-several hundreads Angstrom and so forth, the offsetting time can be shortened to the ignorable degree so as to accurately define the etching time to form the miniature pattern with preferable reproducibility. |
