| 摘要 |
PURPOSE:To obtain a metallic thin film on a semiconductor by modifying the surface of a photoresist by ion implantation or plasma treatment to reduce the adhesive with the conductive layer, and lifiting it off. CONSTITUTION:A resist mask 2 of predetermined pattern is formed on the oxide film 5 of a semiconductor substrate 1. Then, P ion is implanted to modify the surface of the resist mask, and Ti 3 and Pt 4 are laminated thereon. Subsequently, when a resist releasing agent is immersed therewith, the entire adhesive surface of the resist and the Ti is dissolved. When the surface is rubbed with cotton immersed with Trichlene, unnecessary Ti, Pt are easily removed. Ar, B ion may also be used instead of P ion implantation. CF4 plasma treatment may also be effective. According to this method, highly accurate fine pattern can be formed. |
