Method for producing a doped insulator layer

摘要

A method is described for producing a doped insulator layer which is located between two electrically conducting layers arranged on top of one another in an integrated semiconductor circuit. A layer of undoped oxide is formed on the lower of the two layers to be insulated, and a layer of a doped oxide is then formed on this layer by means of a centrifugal deposition process. Subsequent to this, the two oxide layers are densified by a high-temperature treatment.