| 摘要 |
PURPOSE:To contrive the diversity of logic functions of an electrostatic induction type semiconductor integrated circuit device by introducing a novel structure divided with a gate electrode to the logic functions of the SITL to add a NOR logic thereto. CONSTITUTION:The n-type epitaxial layer 12 on an n<+>-type substrate 11 is isolated with an SiO2 layer 16 to selectively form p-type layers 13, 14 and an n<+>-type layer 15 thereon. The layers 13-12-14a and the layer 13-12-14b, and the layer 13-12- 14c form lateral pnp transistor 103, which operate as a constant current source. The layer 15-14a-14c-12, 13 form a SIT 104, which operates as a switcing transistor. Approx. 0.8 volt is applied to an injector layer 13 with respect to the substrate 11 in operation. When all gates G1-G3 are 0 volt, it is depleted from the layer 14 to the SiO2 film 16 to cause the SIT to be pinched off. When one of the gates becomes 0.8 volt, a channel is produced partly under the layer 15 to become on. Accordingly, this switching element has three-input NOR logic function with the gates G1-G3 as input terminals, the D as an output terminal. In this manner, the NOR logic is added to the conventional NOR and AND logics to increase the logic function of the SITL. |
