| 摘要 |
PURPOSE:To easily form an effective thick insulating film in a semiconductor device and obtain a multilayer wiring thereon having a flat surface by employing an interlayer insulation for a laminated layer film of substantially completely cured organic compound film and accumulated coating. CONSTITUTION:A CVD-SiO2 film 15 is accumulated on a substrate 11 having a diffused layer 12, an SiO2 film 13 and a polysilicon wire 14, a photoresist 16 is selectively retained only on the recess of the film 15, and the surface of the films 16 and 15 is substantially flattened. When the resist is heat treated in an inert gas to be completely cured, no scatter nor deformation occur. Then, an opening is perforated at the film 15 to form the second layer aluminum wire 17. In this manner, two or three layers of the CVD-SiO2 film and the resist film are insulated with interlayer insulating film to easily form a thick film, and any step can be alleviated, even if existing on the lower layer, by the resist film so as to substantially flatten the surface of the film. Since the CVD-SiO2 film is provided in the first layer, it can eliminate the contamination of the resist with Na<+> or the like. |
