| 摘要 |
PURPOSE:To provide an accurate and fine wiring through photoetching, by using an Al-Si alloy as a wiring material and laminating a thin Si film. CONSTITUTION:SiO2 2 is provided on an Si substrate 1. An Al-Si alloy film 3 is coated by evaporation. A reflection preventing film 4 of Si is laminated on the film 3. A resist pattern 5 is provided. Reactive sputter etching is effected to make a wiring pattern 3 of the Al-Si film. Reactive sputter etching is effected further to remove the Si film 4. Since the reflection of ultraviolet rays at the time of exposure is greatly reduced by the Si film 4, the resolution is improved and the excellent pattern is made. To assure this effect, the Si content of the Al-Si alloy is set around 1.5-2% and the thickness of the Si film 4 is set around 20nm or more. |
