发明名称 |
VERFAHREN ZUR HERSTELLUNG VON OBERFLAECHENSCHICHTEN AUS HG TIEF 1-X CD TIEF X TE |
摘要 |
A process for preparing layers with a superficial composition of Hg1-xCdxTe comprising the steps of producing a wafer by forming a layer of superficial composition Hg1-yCdyTe on a substrate of CdTe, y being less than the desired value x, and subjecting this wafer to a thermal interdiffusion treatment at a temperature of between about 350 DEG and about 750 DEG C., under such conditions that the layer of Hg1-yCdyTe cannot decompose. |
申请公布号 |
DE3021074(A1) |
申请公布日期 |
1981.01.08 |
申请号 |
DE19803021074 |
申请日期 |
1980.06.04 |
申请人 |
S.A. DE TELECOMMUNICATIONS |
发明人 |
GAUTHIER,ANDRE;FRANCOIS MORAND,JEAN CLAUDE |
分类号 |
C01B19/04;C22C1/00;C23C10/28;C30B29/48;H01L21/20;H01L31/18 |
主分类号 |
C01B19/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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