发明名称 AUFZEICHNUNGSELEMENT
摘要 A recording member having a predetermined substrate, and a thin film which is formed on the substrate and which is formed with recesses or pits for recording information when irradiated with a working beam, characterized in that said thin film is formed of an inorganic material which contains at least arsenic, selenium and tellurium, and that a distribution of either of said Se and said Te decreases from a part near the surface of said thin film towards a central part thereof, while a distribution of said As increases from a part near the surface towards said central part, is disclosed. This recording member can afford a high signal-to-noise ratio and a long lifetime. It is preferable that the distribution of said Se decreases so as to be at least 50 atomic-% in terms of the content of said Se in a part being the closest to the surface of said thin film and to be at most 40 atomic-% in terms of the average content of said Se over the whole thin film, and that the distribution of said As increases so as to be at most 15 atomic-% in terms of the content of said As in the closest part and to be 5 to 35 atomic-% in terms of the average content of said As in said whole thin film. The Se-Te-As-based material may well be doped with at least one element selected from the group consisting of Ge, S, Tl, Sn, Pb, In and Ta, within a range of 2 to 15 atomic-%.
申请公布号 DE3023134(A1) 申请公布日期 1981.01.08
申请号 DE19803023134 申请日期 1980.06.20
申请人 HITACHI,LTD. 发明人 TERAO,MOTOYASU;YOSHIO,TANIGUCHI;HORIGOME,SHINKICHI;OJIMA,MASAHIRO;SHIGEMATSU,KAZUO;MIYAMURA,YOSHINORI;YONEZAWA,SEIJI
分类号 B41M5/26;G03C1/705;G11B7/24;G11B7/243;(IPC1-7):G11B7/24 主分类号 B41M5/26
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