发明名称 Lithographic process for lacquered semiconductor - applies radiation of two types in first even stage followed by longer stage
摘要 <p>The corpuscular or X-ray lithographic process for semiconductor bodies coated with a lacquer applies the radiation for controlled intervals of time. A first dose of radiation can be applied evenly over the resist, then a second dose is applied to obtain the required structure. The even dosage is applied integrally, and electrons can be used for the second dosage. The first dosage can be up to 30 percent of the overall dosage. A different type of radiation is used for one dosage than that used for the other, and the resist must correspond to both types.</p>
申请公布号 DE2927242(A1) 申请公布日期 1981.01.08
申请号 DE19792927242 申请日期 1979.07.05
申请人 SIEMENS AG 发明人 FROSIEN,JUERGEN,DIPL.-ING.
分类号 G03F7/20;H01L21/027;(IPC1-7):01L21/31;01L21/263 主分类号 G03F7/20
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