| 发明名称 |
HALBLEITERANORDNUNG |
| 摘要 |
A bipolar transistor comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A p-type region formed in the convex portion serves as an intrinsic base region, the polycrystalline Si layer serves as an extrinsic base region, an n-type region formed in the intrinsic base region serves as an emitter region, and the body serves as a collector region. |
| 申请公布号 |
DE3022565(A1) |
申请公布日期 |
1981.01.08 |
| 申请号 |
DE19803022565 |
申请日期 |
1980.06.16 |
| 申请人 |
HITACHI,LTD. |
发明人 |
NAKAMURA,TOHRU;MIYAZAKI,TAKAO;TAKAHASHI,SUSUMU;IMAIZUMI,ICHIRO;OKABE,TAKAHIRO;NAGATA,MINORU;KAWAMURA,MASAO |
| 分类号 |
H01L21/20;H01L21/285;H01L21/331;H01L21/8226;H01L23/532;H01L27/02;H01L27/06;H01L27/082;H01L29/08;H01L29/10;H01L29/423;H01L29/45;H01L29/73;(IPC1-7):H01L29/72;H01L29/78;H01L27/04;G11C11/40 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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