| 摘要 |
A method for producing a negative resist image is disclosed, which method comprises exposing a film of a diazotype resist material, which is free from 1-hydroxyethyl-2-alkylimidazoline, to electron beam radiation in a predetermined pattern, heat treating said patternwise exposed resist film, subjecting said heat treated film to overall exposure to ultraviolet radiation and, then, developing the so treated film to remove the resist material in the area not exposed to electron beam radiation.
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