| 摘要 |
PURPOSE:To prevent the switching distortion, by constituting the SEPP power amplifying circuit with the first-the fourth transistors (TR) and connecting the emitter of the second and the fourth TRs to the collector of the third and first TRs respectively via a resistor. CONSTITUTION:The first-the fourth transistors TR2, 1, 9, 8 constitute the SEPP power amplifying circuit, and the emitter of TR1, 8 is connected to the collector of TR9, 2 via the series circuit of the resistors 15, 17 and the diodes 14, 16. Further, when the input signal of negative half cycle is fed to the circuit, the collector current of TR8, 9 is increased to supply power to the load 7, and the base-to-emitter voltage of TR8 and the voltage across the diode 10 are hardly changed regardless of the increase in the emitter current of TR8. Accordingly, the potential at the point B to the point A is not changed. Further, even if the input signal is increased, the emitter voltage of TR1 is decreased under the presence of the diode 14 and the resistor 15 to be ON. Similarly, since TR2 keeps ON-state, the switching distortion is not caused. |
