发明名称 |
Electroluminescent semiconductor device |
摘要 |
An electroluminescent diode with photon recycling having an active electroluminescent second semiconductor layer present between a first and a third semiconductor layer with larger bandwidth and of opposite conductivity type. According to the invention, the active layer has a compensation factor of less than 1/3 and a thickness between 0.1 and 3 absorption lengths of the emitted radiation, the first semiconductor layer has a partially reflecting surface, and the third semiconductor layer has a reflecting surface with two preferably co-planar electrodes one of which is connected to the first semiconductor layer through a highly doped contact zone.
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申请公布号 |
US4243996(A) |
申请公布日期 |
1981.01.06 |
申请号 |
US19790031242 |
申请日期 |
1979.04.18 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
LEBAILLY, JACQUES;VARON, JACQUES |
分类号 |
H01L33/00;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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