发明名称 |
Method for etching a phosphorus-nitrogen-oxygen coating |
摘要 |
A composition is described which comprises amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400 DEG -900 DEG C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.
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申请公布号 |
US4243475(A) |
申请公布日期 |
1981.01.06 |
申请号 |
US19790042488 |
申请日期 |
1979.05.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
LI, PEI-CHING |
分类号 |
C23C16/30;H01L21/311;H01L21/314;(IPC1-7):B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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