发明名称 |
LATERAL CURRENT CONFINEMENT IN JUNCTION LIGHT EMITTING DIODES ESPECIALLY LASERS |
摘要 |
<p>LATERAL CURRENT CONFINEMENT IN JUNCTION LASERS Described is a stripe geometry double heterostructure (DH) junction laser in which lateral current confinement is achieved by pairs of laterally spaced, reverse-biased p-n junctions. A mesa is formed on an n-GaAs substrate, for example, and a layer of p-AlGaAs is then grown by LPE so that nucleation does not occur on the top of the mesa. Laterally spaced zones of p-AlGaAs are thus formed on either side of the mesa. An n-p-p or n-n-p DH is then grown so that the interface between the p-AlGaAs layers and the first n-layer of the DH forms a pair of laterally spaced p-n junctions separated by the mesa. When the lightemitting p-n junction in the DH active region is forward biased, the pair of spaced junctions are reverse biased so that pumping current is constrained to flow through the active region in a narrow channel to the mesa. Further lateral current confinement is achieved by forming on the upper DH surface a second pair of reverse biased p-n junctions separated by a window in alignment with the mesa.</p> |
申请公布号 |
CA1093197(A) |
申请公布日期 |
1981.01.06 |
申请号 |
CA19780301990 |
申请日期 |
1978.04.26 |
申请人 |
WESTERN ELECTRIC COMPANY, INCORPORATED |
发明人 |
LOGAN, RALPH A.;TSANG, WON-TIEN |
分类号 |
H01L21/208;H01L21/306;H01L33/04;H01S5/00;H01S5/22;H01S5/223;(IPC1-7):01S3/19 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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