Method for directional solidification of silicon

摘要

A method for growing silicon crystalline material by the directional solidification method without cracking the growth container. The container material must have an average thermal expansion coefficient of between about 3.0 to 4.3x10-6 DEG C.-1 between about 20 DEG and 650 DEG C. The molten silicon is provided in the container and solidified sequentially from the enclosed regions to the open region of the container to form the crack-free silicon crystalline material.