发明名称 |
Manufacturing method of semiconductor laser with non-absorbing mirror structure |
摘要 |
An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.
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申请公布号 |
US5181218(A) |
申请公布日期 |
1993.01.19 |
申请号 |
US19900619606 |
申请日期 |
1990.11.29 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ISHIKAWA, MASAYUKI;OKUDA, HAJIME;SHIOZAWA, HIDEO;ITAYA, KAZUHIKO;WATANABE, YUKIO;SUZUKI, MARIKO;HATAKOSHI, GENICHI |
分类号 |
H01S5/16;H01S5/223;H01S5/32;H01S5/323 |
主分类号 |
H01S5/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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